VSH

Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes

Vishay Intertechnology released 16 new silicon carbide Schottky diodes, enhancing efficiency and speed for high-frequency applications.

Quiver AI Summary

Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high-frequency applications, these devices offer superior efficiency with a low forward voltage drop, improved reverse recovery characteristics, and reduced conduction losses. The lineup includes dual diode components with ratings from 40 A to 240 A, as well as single-phase bridge devices. These diodes cater to applications such as AC/DC power factor correction and high-frequency output rectification for various sectors including renewable energy and telecom power supplies. Samples and production quantities are available now with an 18-week lead time.

Potential Positives

  • Introduction of 16 new silicon carbide Schottky diodes represents a significant expansion of Vishay's product portfolio in high-performance semiconductor solutions.
  • The devices offer improved efficiency and lower conduction losses, positioning Vishay to better meet the growing demand for high-frequency applications across various sectors including renewable energy and industrial power supplies.
  • Features such as high temperature operation up to +175 °C and easy paralleling enhance the usability of these diodes in demanding applications, making them attractive to engineers and designers.
  • UL approval and an industry-standard package facilitate integration and adoption by customers, potentially increasing market share against competitors.

Potential Negatives

  • The lead time for samples and production quantities is 18 weeks, which may delay customer projects and impact market competitiveness.
  • The press release does not mention any partnerships or collaborations that could enhance the market reach or impact of the new products, possibly indicating a lack of strategic alignment.

FAQ

What are the new products introduced by Vishay Intertechnology?

Vishay has introduced 16 new 650 V and 1200 V silicon carbide Schottky diodes in the SOT-227 package.

What applications are suitable for Vishay's Schottky diodes?

The diodes are ideal for AC/DC PFC and DC/DC high-frequency output rectification in various systems, including photovoltaic and industrial applications.

What is the maximum operating temperature for the new SiC diodes?

The new silicon carbide diodes can operate at high temperatures up to +175 °C.

How do Vishay's diodes compare to silicon-based diodes?

Vishay's SiC diodes offer better reverse recovery parameters and lower conduction losses than traditional silicon-based diodes.

How quickly can customers expect to receive samples of the new diodes?

Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.

Disclaimer: This is an AI-generated summary of a press release distributed by GlobeNewswire. The model used to summarize this release may make mistakes. See the full release here.


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Full Release



MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V

silicon carbide (SiC) Schottky diodes

in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (Q

C

) and forward voltage drop for diodes in their class.



The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.



Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low Q

C

down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.



The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.





Device Specification Table:

















































































































































Part Number



V



R





(V)



I



F(




AV




)





(A)



V



F



at




I



F



(V)



I



FSM





(A)



Q



C





(nC)



Configuration


VS-SC40FA65















650















40

1.36

105

56¹

Two separate diodes, parallel pin-out

VS-SC80FA65

80

1.36

225

110¹

Two separate diodes, parallel pin-out

VS-SC120FA65

120

1.39

340

164¹

Two separate diodes, parallel pin-out

VS-SC160FA65

160

1.38

450

220¹

Two separate diodes, parallel pin-out

VS-SC200FA65

200

1.39

555

275¹

Two separate diodes, parallel pin-out

VS-SC240FA65

240

1.40

675

328¹

Two separate diodes, parallel pin-out

VS-SC50BA65

50

1.50

267

110¹

Single phase bridge

VS-SC90BA65

90

1.61

340

164¹

Single phase bridge

VS-SC40FA120















1200

















40

1.39

130

112²

Two separate diodes, parallel pin-out

VS-SC80FA120

80

1.4

260

224²

Two separate diodes, parallel pin-out

VS-SC120FA120

120

1.42

385

333²

Two separate diodes, parallel pin-out

VS-SC160FA120

160

1.44

500

444²

Two separate diodes, parallel pin-out

VS-SC200FA120

200

1.45

620

553²

Two separate diodes, parallel pin-out

VS-SC240FA120

240

1.45

690

651²

Two separate diodes, parallel pin-out

VS-SC50BA120

50

1.5

328

223²

Single phase bridge

VS-SC90BA120

90

1.9

500

332²

Single phase bridge


¹V

R

= 400 V


²V

R

= 800 V



Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.



Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is

The DNA of tech.


®

Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at

www.Vishay.com

.




The DNA of tech


®

is a registered trademark of Vishay Intertechnology.




Vishay on Facebook:


http://www.facebook.com/VishayIntertechnology




Vishay Twitter feed:


http://twitter.com/vishayindust




Link to product datasheets:




https://www.vishay.com/search/?searchChoice=part&query=VS-SC




Link to product photo:




https://www.flickr.com/photos/vishay/albums/72177720323376025




For more information please contact:



Vishay Intertechnology


Peter Henrici, +1 408 567-8400



peter.henrici@vishay.com



or


Redpines


Bob Decker, +1 415 409-0233



bob.decker@redpinesgroup.com






This article was originally published on Quiver News, read the full story.

The views and opinions expressed herein are the views and opinions of the author and do not necessarily reflect those of Nasdaq, Inc.

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